Elsevier S & T

Advances in Research and Development: Modeling of Film Deposition for Microelectronic Applications

Francombe, Maurice H.

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Table of contents
  • Cover
  • Contentsv
  • Contributorsix
  • Prefacexi
  • Chapter 1. GexSi1- x Epitaxial Layer Growth and Application to Integrated Circuits1
  • I. Introduction2
  • II. Gex Si1-x Heterojunctions„General Considerations3
  • III. Growth by Molecular Beam Epitaxy6
  • IV. Growth by Chemical Vapor Deposition21
  • V. Application to Heterojunction Bipolar Transistors51
  • VI. The GexSi1-x Channel MOSFET68
  • VII. Conclusions and Future Prospects73
  • Acknowledgments74
  • References74
  • Chapter 2. Platinum Silicide Internal Emission Infrared Imaging Arrays83
  • I. Introduction84
  • II. The Internal Emission Process88
  • III. State of the Art of Platinum Silicide Detectors and Arrays100
  • IV. Future of Platinum Silicide Detector and Sensor Development106
  • V. Summary111
  • References111
  • Chapter 3. Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals115
  • I. Introduction116
  • II. Infrared Bands, Detectors, and Materials117
  • III. Group-IV Epitaxial Devices for Infrared Detectors141
  • IV. Growth and Fabrication of Si-Based Infrared Detector Structures162
  • V. Conclusion168
  • References168
  • Chapter 4. III-V Quantum-Well Structures for High-Speed Electronics173
  • I. Background on Quantum-Well Infrared Detectors174
  • II. Quantum-Well Detector Design and Intersubband Absorption178
  • III. MQW Detector Fabrication and DC Response Characteristics188
  • IV. Electrical Bandwidth and Optical-Heterodyne Experiments196
  • V. Applications204
  • VI. Improvements in MQW Heterodyne Detectors211
  • References216
  • Chapter 5. Quantum-Well Devices for Infrared Emission217
  • I. Introduction and Background218
  • II. Quantum Wells in Interband-Type IR Sources220
  • III. Intersubband Transition Processes for IR Emission238
  • IV. Graded-Gap Injection Structures for MWIR and LWIR Emission262
  • V. Recent Trends, Limitations, and Application Potential274
  • References282
  • VI. Appendix286
  • Author Index299
  • Subject Index305
Book details
  • Vendor Elsevier S & T
  • SKU 9780125330237
  • ISBN-13 9780080542904
  • Author Francombe, Maurice H.
  • Category Science
  • Subject Organic

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Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.