Elsevier S & T

Characterization of Semiconductor Heterostructures and Nanostructures

Agostini, Giovanni; Lamberti, Carlo

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Table of contents
  • Cover
  • Characterization of Semiconductor Heterostructures and Nanostructuresiii
  • Copyright Pageiv
  • Contentsvii
  • Prefaceix
  • Chapter 1: Introduction: the interdisciplinary nature of nanotechnology and its need to exploit fron1
  • 1. The scientific and editorial blow up of nanotechnology in the new millennium1
  • 2. Heterostructures and nanostructures: definition and applications, from optoelectronics to catalys4
  • 3. Dynamic interplay among growth/synthesis techniques, theoretical modeling, and characterization t6
  • 4. Purposes of the book and chapters layout7
  • 5. A key example of multidisciplinarity in nanotechnology: the atomically defined –O–Ti–O–T?8
  • References12
  • Chapter 2: Ab initio studies of structural and electronic properties17
  • 1. Introduction17
  • 2. Basic models18
  • 3. Computational approach22
  • 4. Band Offsets32
  • 5. Designing heterostructures and engineering band offsets40
  • 6. Localized interface states43
  • 7. Simulating cross-sectional scanning tunneling microscopy images for characterization46
  • 8. Semiconductor heterostructures for spintronic applications47
  • 9. Summary and future perspectives50
  • References51
  • Chapter 3: Electrical characterization of nanostructures55
  • 1. Introduction55
  • 2. Electrical characterization56
  • 3. Photoinduced electrical characterization71
  • 4. Case study: electrical characterization of GaN nanowires79
  • 5. Summary and future development89
  • Acknowledgments89
  • References89
  • Chapter 4: Strain and composition determination in semiconducting heterostructures by high-resolutio93
  • 1. Introduction94
  • 2. Lattice-mismatched and pseudomorphic heterostructures94
  • 3. X-ray diffraction profiles of semiconducting heterostructures98
  • 4. Determination of the composition of a semiconducting alloy heterostructures108
  • 5. Strain release in semiconducting material heterostructures111
  • 6. Experimental results116
  • 7. Strain determination in zero-dimensional heterostructures120
  • 8. Summary and future perspectives129
  • References129
  • Chapter 5: Transmission electron microscopy techniques for imaging and compositional evaluation in s133
  • 1. Introduction133
  • 2. Experimental: basics of the electron microscope134
  • 3. Diffraction contrast in TEM images138
  • 4. Phase contrast149
  • 5. Other techniques157
  • 6. Application of the TEM technique to semiconductor heterostructures160
  • Appendix: Simulation of TEM images169
  • References172
  • Chapter 6: Accessing structural and electronic properties of semiconductor nanostructures via photol175
  • 1. Introduction175
  • 2. Experimental systems and techniques177
  • 3. Electronic and optical properties of quantum structures180
  • 4. Photoluminescence characterization of quantum wells194
  • 5. Summary204
  • References205
  • Chapter 7: Power-dependent cathodoluminescence in III–nitrides heterostructures: from internal fie209
  • 1. Short introduction to cathodoluminescence spectroscopy209
  • 2. Cathodoluminescence on III–nitrides heterostructures224
  • 3. Power-dependent cathodoluminescence: three examples228
  • 4. Conclusions239
  • Acknowledgments240
  • Appendix: “ALLES” software for the simulation of CL processes in semiconductors240
  • References245
  • Chapter 8: Raman spectroscopy249
  • 1. Introduction249
  • 2. Experimental methods258
  • 3. Applications263
  • 4. Summary and future perspectives284
  • Acknowledgements285
  • References285
  • Chapter 9: X-ray absorption fine structure in the study of semiconductor heterostructures and nanost289
  • 1. Introduction to X-ray absorption spectroscopy for local structural studies289
  • 2. Detection schemes and experimental setups relevant for semiconductor research299
  • 3. A review of the use of XAFS in the field of semiconductor heterostructures and nanostructures306
  • 4. Summary and perspectives324
  • Acknowledgments325
  • References326
  • Chapter 10: Nanostructures in the light of synchrotron radiation: surface-sensitive X-ray techniques331
  • 1. Introduction331
  • 2. Scientific background for grazing incidence X-ray techniques on nanostructures333
  • 3. Application of grazing incidence techniques344
  • 4. Summary and future perspective366
  • References367
  • Chapter 11: Grazing incidence diffraction anomalous fine structure in the study of structural proper371
  • 1. Introduction371
  • 2. Basic Principles373
  • 3. Experimental setup382
  • 4. Data analysis384
  • 5. Applications to semiconductor nanostructures387
  • 6. Summary and perspectives401
  • Acknowledgments402
  • References402
  • Chapter 12: The role of photoemission spectroscopies in heterojunction research407
  • 1. Introduction407
  • 2. Angle-resolved photoemission417
  • 3. Local chemical analysis419
  • 4. Photoemission spectromicroscopy421
  • 5. Case studies423
  • 6. Summary and conclusions432
  • References432
  • Chapter 13: ESR of interfaces and nanolayers in semiconductor heterostructures435
  • 1. Introduction435
  • 2. ESR technique439
  • 3. Probing semiconductor/insulator interfaces through inherent point defects451
  • 4. Paramagnetic defects in dielectric layers473
  • 5. Summary and future perspectives477
  • References478
  • Subject Index483
  • Colour Plates487
Book details
  • Vendor Elsevier S & T
  • SKU 9780444530998
  • ISBN-13 9780080558158
  • Author Agostini, Giovanni; Lamberti, Carlo
  • Category Science
  • Subject Physical & Theoretical

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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures.

- Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures
- Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field
- Each chapter starts with a didactic introduction on the technique
- The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors