Elsevier S & T

Diamond Films: Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth

Kobashi, Koji

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Table of contents
  • CONTENTSix
  • Prefacev
  • Acknowledgmentvii
  • Chapter 1. Overview of Oriented Growth3
  • Chapter 2. Diamond – Structure and CVD Growth9
  • 2.1. Structure of diamond9
  • 2.2. CVD growth of diamond9
  • Chapter 3. Microwave Plasma CVD Reactors17
  • 3.1. NIRIM-type reactor17
  • 3.2. ASTeX-type reactors18
  • 3.3. Wavemat reactor18
  • 3.4. AIXTKON reactors20
  • 3.5. SAIREM reactor20
  • Chapter 4. Other Reactors25
  • 4.1. Hot filament CVD reactor25
  • 4.2. DC plasma CVD reactor26
  • Chapter 5. Crystal Orientations and Film Surface Morphology31
  • 5.1. X-ray pole figure (XPF)33
  • 5.2. Orientational evolution35
  • 5.3. Uniaxial <110>-growth36
  • 5.4. Uniaxial <100>-growth36
  • 5.5. alpha -parameter37
  • 5.6. Effects of B and N addition on surface morphology48
  • 5.7. Surface energy48
  • Chapter 6. Formation of Twins53
  • 6.1. Types of twins53
  • 6.2. Structure of twins55
  • Chapter 7. Homoepitaxial Growth65
  • 7.1. Growth kinetics65
  • 7.2. Growth on off-angle diamond surfaces67
  • 7.3. Internal stress70
  • 7.4. Defect structures70
  • 7.5. High quality diamond growth71
  • 7.6. Enlargement of single crystal diamond surface area74
  • Chapter 8. Surface Reconstruction81
  • 8.1. (100) surface81
  • 8.2. (111) and (110) surfaces83
  • Chapter 9. Heteroepitaxial Growth on cBN, Ni, and Other Substrates91
  • 9.1. Heteroepitaxial growth of diamond on cBN91
  • 9.2. Oriented growth of diamond on metals and compounds97
  • 9.3. Graphite112
  • 9.4. Sapphire114
  • 9.5. Local epitaxy on Si114
  • 9.6. Interface layers116
  • Chapter 10. Diamond Nucleation121
  • 10.1. Methods of diamond nucleation121
  • 10.2. BEN method122
  • Chapter 11. HOD Film Growth157
  • 11.1. Historical background157
  • 11.2. HOD film growth on beta-SiC (100) layer158
  • 11.3. Three-step process: Growth of HOD films on carburized Si(100)166
  • 11.4. Two-step process: Growth of HOD films directly on Si(100)173
  • 11.5. AFM studies of film surfaces180
  • 11.6. Interface structures182
  • 11.7. Internal defects195
  • 11.8. Post-treatment of HOD films195
  • 11.9. Uniformity of nucleation196
  • 11.10. In situ monitoring199
  • 11.11 . Optimizing BEN conditions200
  • 11.12. Various techniques for BEN201
  • 11.13. Lateral growth205
  • 11.14. Suppression of secondary nucleation205
  • 11.15. Effects of additives205
  • 11.16. (111)- and (110)-oriented growth on Si(111) and Si(110) surfaces206
  • 11.17. Recent progress210
  • 11.18. Characterization of HOD films210
  • 11.19. Selective deposition222
  • 11.20. Model mechanisms222
  • 11.21. Summary discussion on HOD films229
  • Chapter 12. Oriented Growth on Noble Metals235
  • 12.1. Pt(111)235
  • 12.2. Ir(100)251
  • 12.3. Palladium261
  • 12.4. Low Pressure Solid State Source (LPSSS)261
  • Chapter 13. Properties and Applications of Heteroepitaxial Diamond Films265
  • 13.1. B-doping265
  • 13.2. Piezoresistive devices270
  • 13.3. Ink-jet module272
  • 13.4. pH sensors274
  • 13.5. Ultraviolet sensor276
  • 13.6. Cathodoluminescence280
  • 13.7. Hole conduction at H-terminated surface282
  • 13.8. Field effect transistors283
  • 13.9. Field emission284
  • Chapter 14. Conclusions289
  • APPENDICES291
  • Appendix A. Notations and Units293
  • Appendix B. Plasma299
  • Appendix C. Properties of Diamond and Other Semiconductors300
  • Appendix D. Reconstruction of Diamond Surfaces301
  • Appendix E. Materials Constants303
  • Appendix F. Phase Diagrams of Carbon and Metals304
  • Appendix G. Carbon Solubility in Metals309
  • Appendix H. Process Conditions for Biasing and HOD Film Growth310
  • References319
  • Index335
Book details
  • Vendor Elsevier S & T
  • SKU 9780080447230
  • ISBN-13 9780080525570
  • Author Kobashi, Koji
  • Category Science
  • Subject Physical & Theoretical

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  • Discusses the most advanced techniques for diamond growth

  • Assists diamond researchers in deciding on the most suitable process conditions

  • Inspires readers to devise new CVD (chemical vapor deposition


Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.