Elsevier S & T

Frontiers of Thin Film Technology

Rossnagel, Stephen M.

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Table of contents
  • Cover
  • Contentsv
  • List of Contributionsix
  • Prefacexi
  • Chapter 1. Epitaxial Film Growth and Characterization1
  • 1.1. Introduction1
  • 1.2. Epitaxial Deposition Techniques4
  • 1.3. Materials Characterization37
  • 1.4. Future Directions62
  • References64
  • Chapter 2. Field Effect Transistors: FETs and HEMTs71
  • 2.1. Introduction72
  • 2.2. HEMT Device Operation and Design73
  • 2.3. Scaling Issues in Ultrahigh-speed HEMTs84
  • 2.4. Low-Noise HEMT Design89
  • 2.5. Power HEMT Design93
  • 2.6. Material Systems for HEMT Devices97
  • 2.7. AIGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAs pHEMT)102
  • 2.8. AIInAs/GaInAs/InP (InP HEMT)113
  • 2.9. Conclusion134
  • References135
  • Chapter 3. Antimony-Based Infrared Materials and Devices147
  • 3.1. Introduction147
  • 3.2. Overview of Materials and Electronic Properties149
  • 3.3. Mechanisms Limiting the Performance of Sources and Detectors156
  • 3.4. Infrared Emitters160
  • 3.5. Infrared Detectors167
  • 3.6. Conclusions182
  • References182
  • Chapter 4. HgCdTe Infrared Detectors193
  • 4.1. Introduction193
  • 4.2. HgCdTe Material Properties and Background194
  • 4.3. HgCdTe Growth199
  • 4.4. Native Defects and Impurity Doping Behavior200
  • 4.5. Photovoltaic Detectors207
  • 4.6. Recent Progress in Focal Plane Arrays (FPAs)217
  • 4.7. Conclusions219
  • References220
  • Chapter 5. Synthesis and Characterization of Superconducting Thin Films227
  • 5.1. Synthesis228
  • 5.2. Thin Film Characterization Techniques253
  • 5.3. Summary266
  • References266
  • Chapter 6. Fabrication of Superconducting Devices and Circuits271
  • 6.1. Introduction272
  • 6.2. Nb Circuit Process276
  • 6.3. NbN Circuit Process291
  • 6.4. HTS Circuit Process295
  • 6.5. Summary313
  • References314
  • Chapter 7. Microwave Magnetic Film Devices319
  • 7.1. Introduction to Applications of Magnetic Films in Microwave Devices319
  • 7.2. Current Approaches to Fabricate Ferrite Films325
  • 7.3. Ferrite Film Progress329
  • 7.4. Monolithic Integration of Ferrite Film Devices with Semiconductors348
  • References369
  • Chapter 8. Ferroelectric Thin Films: Preparation and Characterization375
  • 8.1. Introduction375
  • 8.2. Growth Processes of Ferroelectric Thin Films376
  • 8.3. Processing of Ferroelectric Thin Films384
  • 8.4. Compound Phase Formation392
  • 8.5. Electrical Properties398
  • 8.6. Process-Property Correlation: Low-Energy Oxygen Ion Beam Bombardment Effect420
  • 8.7. Microstructure-Dependent Electrical Properties428
  • 8.8. Summary430
  • References430
  • Chapter 9. Integration Aspects of Advanced Ferroelectric Thin-Film Memories435
  • 9.1. Introduction435
  • 9.2. Design Considerations436
  • 9.3. Capacitor Formation438
  • 9.4. Electrode and Capacitor Patterning448
  • 9.5. Hydrogen-Containing Ambient453
  • 9.6. Impact of the Ferroelectric Processing on Silicon Devices454
  • 9.7. Equipment Issues456
  • 9.8. Summary and Outlook457
  • References458
  • Subject Index465
  • Recent Volumes In This Series477
  • Color Plate Section479
Book details
  • Vendor Elsevier S & T
  • SKU 9780125330282
  • ISBN-13 9780080542942
  • Author Rossnagel, Stephen M.
  • Category Technology & Engineering
  • Subject Materials Science

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Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures.

Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.