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Table of contents
- Cover
- Copyright Pageiv
- Contentsv
- Prefacexi
- List of Contributorsxiii
- Chapter 1. Introduction to Hydrogen in Semiconductors II1
- Chapter 2. Isolated Monatomic Hydrogen in Silicon13
- I. Introduction13
- II. Theory14
- III. Experiment18
- IV. Conclusions21
- References22
- Chapter 3. Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Cryst25
- I. Introduction25
- II. Interstitial (BC) Hydrogen in Silicon28
- III. EPR of Hydrogen-Related Complexes in Silicon45
- IV. Hydrogen-Induced Effects in Silicon51
- V. Summary and Conclusions75
- References77
- Chapter 4. Hydrogen in Polycrystalline Silicon83
- I. Introduction83
- II. Experimental Techniques85
- III. Hydrogen Diffusion87
- IV. Hydrogen Passivation of Grain-Boundary Defects110
- V. Metastability124
- VI. Hydrogen-Induced Defects During Plasma Exposure143
- VII. Summary and Future Directions159
- References161
- Chapter 5. Hydrogen Phenomena in Hydrogenated Amorphous Silicon165
- I. Introduction165
- II. Material Characterization by Hydrogen Effusion and Infrared Absorption166
- III. Experimental Hydrogen Diffusion and Solubility Data182
- IV. Hydrogen Diffusion and Effusion Effects199
- V. Hydrogen Solubility Effects230
- VI. Conclusions235
- References236
- Chapter 6. Hydrogen Interactions with Polycrystalline and Amorphous Silicon„Theory241
- I. Introduction241
- II. Hydrogen Interactions with Amorphous Silicon248
- III. Hydrogen in Polycrystalline Silicon271
- IV. Conclusions and Future Directions277
- References278
- Chapter 7. Hydrogen in Polycrystalline CVD Diamond283
- I. Introduction283
- II. Solid-State Characterization Techniques286
- III. Results of Solid-State Analysis294
- IV. Effects of Hydrogen on Observed Properties305
- V. Summary308
- References309
- Chapter 8. Dynamics of Muonium Diffusion, Site Changes and Charge-State Transitions311
- I. Introduction311
- II. Experimental Techniques316
- III. Identification and Characterization of Muonium States328
- IV. Dynamics of Muonium Transitions341
- V. Relevance to Hydrogen Impurities366
- References369
- Chapter 9. Hydrogen in III-V and II-VI Semiconductors373
- I. Introduction373
- II. Hydrogen in III-V Semiconductors376
- III. Hydrogen in II-VI Semiconductors426
- IV. Summary and Future Discussion434
- References436
- Chapter 10. The Properties of Hydrogen in GaN and Related Alloys441
- I. Introduction441
- II. Hydrogen in As-Grown Nitrides442
- III. Dopant Passivation450
- IV. Diffusion and Reactivation Mechanism456
- V. Role of Hydrogen During Processing469
- VI. Theory of Hydrogen in Nitrides472
- VII. Summary and Conclusions476
- References477
- Chapter 11. Theory of Hydrogen in GaN479
- I. Introduction479
- II. Method481
- III. Monatomic Hydrogen in GaN483
- IV. Hydrogen Molecules in GaN489
- V. Hydrogen-Acceptor Complexes in GaN489
- VI. Complexes of H with Native Defects492
- VII. Role of Hydrogen in Doping GaN495
- VIII. General Criteria for Hydrogen to Enhance Doping499
- IX. Conclusions and Outlook500
- References501
- Index503
- Contents of Volumes in This Series509
Book details
- Vendor Elsevier S & T
- SKU 9780127521701
- ISBN-13 9780080525259
- Author Willardson, Robert K.
- Category Technology & Engineering
- Subject Semiconductors
Do you have questions about this book?
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon available in a single source
* Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon available in a single source
* Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
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