Elsevier S & T

Nanosilicon

Kumar, Vijay

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Table of contents
  • Copyright Pageiv
  • Contentsvii
  • Prefacexv
  • Chapter 1 Silicon Nanoparticles: New Photonic and Electronic Material at the Transition Between Soli1
  • 1.1 Introduction3
  • 1.2 Synthesis3
  • 1.2.1 Physical Techniques3
  • 1.2.2 Physico-Chemical Techniques4
  • 1.2.3 Chemical Techniques4
  • 1.2.4 Electrochemical Techniques4
  • 1.2.5 Discretely Sized Si Nanoparticles6
  • 1.3 Functionalization8
  • 1.3.1 Initial Surface Condition9
  • 1.3.2 Alkylated Particles11
  • 1.3.3 Aggregation and Solubility15
  • 1.3.4 Stability in Acid17
  • 1.4 Spectroscopic characterization17
  • 1.4.1 Fourier Transform Infrared Spectroscopy17
  • 1.4.2 Nuclear Magnetic Resonance19
  • 1.4.3 Gel Permission Chromotography20
  • 1.4.4 X-Ray Photospectroscopy21
  • 1.4.5 Auger Electron Spectroscopy21
  • 1.4.6 Transmission Electron Microscopy21
  • 1.5 Optical properties22
  • 1.5.1 PL and Detection of Single Nanoparticles22
  • 1.5.2 PL Lifetime26
  • 1.5.3 Cathodoluminescence and Electroluminescence27
  • 1.5.4 Photostability Under UV and Infrared Radiation29
  • 1.6 Reconstitution of particles in films29
  • 1.6.1 Precipitation Spray30
  • 1.6.2 Electrodeposition: Composite Films of Metal and Nanoparticles31
  • 1.6.3 Silicon Sheet Roll into Tubes32
  • 1.6.4 Self-Assembly33
  • 1.7 Nonlinear optical properties34
  • 1.7.1 Stimulated Emission34
  • 1.7.2 Second Harmonic Generation39
  • 1.7.3 Gain and Optical Nonlinearity39
  • 1.8 Effect of functionalization on emission41
  • 1.9 Structure of particles41
  • 1.9.1 Luminescence Models42
  • 1.9.2 Computational Methods for Electronic Structure of Nanoclusters43
  • 1.9.3 Prototype of Hydrogenated Particles (Supermolecule)49
  • 1.9.4 H[sub(2)]O[sub(2)] Effect on Surface Reconstruction51
  • 1.9.5 Novel Si„Si Bonds (Molecular-Like Behaviour)52
  • 1.9.6 Structural Stability of the Prototype54
  • 1.9.7 Material Properties: Dielectric Constant and Effective Mass55
  • 1.9.8 Excited States (Molecular-Like Bands)57
  • 1.9.9 Collective Molecular Surface57
  • 1.9.10 Phonon Structure: Collective Molecular Vibration Modes59
  • 1.9.11 Molecular-Like Emission: Direct versus Indirect Process60
  • 1.9.12 X-Ray Form Factors61
  • 1.9.13 Effect of Termination on the Band Gap63
  • 1.10 Device applications63
  • 1.10.1 Photoelectric Conversion/UV Photodetector64
  • 1.10.2 Metal Oxide Silicon Memory Devices66
  • 1.10.3 Biophotonic Imaging68
  • 1.10.4 Amperometric Detection69
  • 1.10.5 Nanosolar Cell71
  • 1.10.6 Nanoink Printing72
  • 1.10.7 Single Electron Transistor Devices73
  • 1.11 Conclusion73
  • Acknowledgements74
  • References74
  • Chapter 2 Cluster Assembled Silicon Networks79
  • 2.1 Introduction80
  • 2.2 Isolated Silicon Clusters81
  • 2.2.1 Small Si[sub(N)] Clusters (N < 14)81
  • 2.2.2 Medium-Sized Clusters (20 < N < 100): the Case of Si[sub(33)]82
  • 2.2.3 Large Clusters (N > 100)82
  • 2.3 Si-Cluster-Assembled Materials83
  • 2.3.1 Introduction83
  • 2.3.2 Si-Cluster-Assembled Films83
  • 2.3.3 Bulk Si-Cluster-Assembled Materials from Fullerenes: Clathrate Phases97
  • 2.4 Conclusion110
  • Acknowledgements110
  • References111
  • Chapter 3 Metal Encapsulated Clusters of Silicon: Silicon Fullerenes and Other Polyhedral Forms114
  • 3.1 Introduction115
  • 3.2 Clusters of Elemental Silicon118
  • 3.3 Metal Encapsulation: A New Paradigm121
  • 3.3.1 Silicon Fullerenes121
  • 3.3.2 Metal Size Dependent Encapsulated Silicon Structures122
  • 3.3.3 The Electronic Factor and the Isolated Rhombus Rule124
  • 3.3.4 Reactivity as a Probe of Metal Encapsulation137
  • 3.3.5 Vibrational Properties137
  • 3.3.6 Empty and Endohedral Hydrogenated Fullerene Cages of Silicon139
  • 3.3.7 Absorption Spectra142
  • 3.3.8 Magnetic Clusters of Silicon142
  • 3.4 Summary144
  • Acknowledgments145
  • References145
  • Chapter 4 Porous Silicon – Sensors and Future Applications149
  • 4.1 Introduction150
  • 4.2 Kinds of PS151
  • 4.2.1 Pore Structure in PS151
  • 4.2.2 PL from PS153
  • 4.3 PS sensors157
  • 4.3.1 PS Humidity Sensors157
  • 4.3.2 PS Chemical Sensors161
  • 4.3.3 PS Gas Sensors161
  • 4.4 Future technology168
  • 4.4.1 Nanoparticle Photocatalytic Coating of PS168
  • 4.4.2 Lithium Electrolyte-Based PS Microbattery Electrodes170
  • 4.5 Conclusions172
  • References172
  • Chapter 5 Silicon Nanowires and Nanowire Heterostructures176
  • 5.1 Introduction177
  • 5.2 Silicon nanowires177
  • 5.2.1 Rational Synthesis and Structural Characterization of SiNW177
  • 5.2.2 Electronic Properties of SiNWs182
  • 5.2.3 SiNWs for Nanoelectronics190
  • 5.2.4 Large-Scale Hierarchical Organization of SiNW Arrays195
  • 5.2.5 SiNWs as Nanoscale Sensors200
  • 5.3 SiNW heterostructures204
  • 5.3.1 NiSi/SiNW Heterostructures204
  • 5.3.2 Modulation Doped SiNWs204
  • 5.3.3 Branched and Hyper-Branched SiNWs209
  • 5.4 Summary213
  • References214
  • Chapter 6 Theoretical Advances in the Electronic and Atomic Structures of Silicon Nanotubes and Nano217
  • 6.1 Introduction218
  • 6.2 Computational approach220
  • 6.3 Silicon nanotubes220
  • 6.3.1 Metal Encapsulated Nanotubes of Silicon222
  • 6.3.2 Electronic Structure and Bonding Nature225
  • 6.3.3 Magnetism in Metal Encapsulated SiNTs228
  • 6.4 Germanium nanotubes231
  • 6.4.1 Metallic and Semiconducting Nanotubes of Ge233
  • 6.5 Silicon nanowires235
  • 6.5.1 Non-Crystalline Pristine SiNWs237
  • 6.5.2 Crystalline Pristine SiNWs238
  • 6.5.3 Band Structure of SiNWs243
  • 6.6 Hydrogenated nanowires244
  • 6.6.1 Electronic Structure of Hydrogenated SiNWs249
  • 6.6.2 Effects of Doping and H Defects251
  • 6.7 Nanowire superlattices253
  • 6.8 Conclusion and perspective remarks254
  • Acknowledgements255
  • References255
  • Chapter 7 Phonons in Silicon Nanowires258
  • 7.1 Introduction259
  • 7.2 Theoretical Models for Confined Phonons261
  • 7.2.1 Lattice Dynamics of Si Nanowires261
  • 7.2.2 The Richter Model for Raman Scattering from Confined Phonons267
  • 7.3 Experimental Evidence of Confined Phonons in Silicon269
  • 7.3.1 Acoustic Phonons269
  • 7.3.2 Optical Phonons273
  • 7.3.3 Thermal Conductivity275
  • 7.4 Effects of Inhomogeneous Laser Heating on Raman Lineshape278
  • 7.4.1 Stokes–AntiStokes Ratio as a Probe of Laser Heating of Si Nanowires279
  • 7.4.2 Evolution of the Raman Band Asymmetry with Laser Flux280
  • 7.4.3 Modification of Richter’s Lineshape Function to Include Inhomogeneous Heating282
  • 7.5 Summary and Conclusions285
  • Acknowledgements285
  • References286
  • Chapter 8 Quasi-One-Dimensional Silicon Nanostructures289
  • 8.1 Introduction290
  • 8.2 Silicon nanowires290
  • 8.2.1 Pentagonal Silicon Wires290
  • 8.2.2 Hydrogen-Passivated Silicon Wires297
  • 8.3 Metal silicide300
  • 8.3.1 Endohedral Silicon Nanotubes301
  • 8.3.2 Yttrium Silicide NW307
  • 8.3.3 Energy Decomposition308
  • References312
  • Acknowledgements311
  • Chapter 9 Low-dimensional Silicon as a Photonic Material314
  • 9.1 The need of a Silicon-Based Photonics314
  • 9.2 Various Approaches to a Silicon Light Source316
  • 9.2.1 Silicon Raman Laser317
  • 9.2.2 Bulk Silicon Light Emitting Diodes319
  • 9.3 Optical Gain in Silicon Nanocrystals321
  • 9.3.1 CW and TR Measurements322
  • 9.3.2 Gain Model: Four-Level System325
  • 9.3.3 Other Key Ingredients327
  • 9.4 Er Coupled Si Nanocrystal Optical Amplifiers328
  • 9.4.1 E[sup(3+)] Internal Transition329
  • 9.4.2 E[sup(3+)] and Si-nc Interactions330
  • 9.4.3 E[sup(3)] Cross Sections330
  • 9.5 Conclusions332
  • Acknowledgements333
  • References333
  • Chapter 10 Nanosilicon Single-Electron Transistors and Memory335
  • 10.1 Introduction335
  • 10.1.1 Single-Electron and Quantum Confinement Effects337
  • 10.2 Nanosilicon SETs341
  • 10.2.1 Conduction in Continuous Nanocrystalline Silicon Films341
  • 10.2.2 Silicon Nanowire SETs343
  • 10.2.3 Point-Contact SETs: Room Temperature Operation346
  • 10.2.4 Grain-BoundaryŽ Engineering350
  • 10.2.5 Single-Electron Transistors Using Silicon Nanocrystals351
  • 10.2.6 Comparison with Crystalline Silicon SETs352
  • 10.3 Electron Coupling Effects in Nanosilicon352
  • 10.3.1 Electrostatic Coupling Effects354
  • 10.3.2 Electron Wavefunction Coupling Effects354
  • 10.4 Nanosilicon memory356
  • References358
  • Index361
  • A361
  • B361
  • C361
  • D361
  • E361
  • F362
  • G362
  • H362
  • I362
  • K362
  • L362
  • M363
  • N363
  • O363
  • P363
  • Q364
  • R364
  • S364
  • T367
  • U367
  • V367
  • W367
  • X368
  • Y368
  • Z368
Book details
  • Vendor Elsevier S & T
  • SKU 9780080445281
  • ISBN-13 9780080549514
  • Author Kumar, Vijay
  • Category Technology & Engineering
  • Subject Materials Science

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Properties of nanosilicon in the form of nanoparticles, nanowires, nanotubes, and as porous material are of great interest. They can be used in finding suitable components for future miniature devices, and for the more exciting possibilities of novel optoelectronic applications due to bright luminescence from porous silicon, nanoparticles and nanowires. New findings from research into metal encapsulated clusters, silicon fullerenes and nanotubes have opened up a new paradigm in nanosilicon research and this could lead to large scale production of nanoparticles with control on size and shape as well as novel quasi one-dimensional structures. There are possibilities of using silicon as an optical material and in the development of a silicon laser.

In this book leading experts cover state-of-the-art experimental and theoretical advances in the different forms of nanosilicon. Furthermore, applications of nanosilicon to single electron transistors, as photonic material, chemical and biological sensors at molecular scale, and silicon nanowire devices are also discussed. Self-assemblies of silicon nanoforms are important for applications. These developments are also related to cage structures of silicon in clathrates. With an interesting focus on the bottlenecks in the advancement of silicon based technology, this book provides a much-needed overview of the current state of understanding of nanosilicon research.

* Latest developments in nanoparticles, nanowires and nanotubes of silicon
* Focus on nanosilicon - a very timely subject attracting large interest
* Novel chapters on metal encapsulated silicon clusters and nanotubes