Rapid Thermal Processing for Future Semiconductor Devices
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Table of contents
- Cover
- Copyright Pageiv
- CONTENTSix
- Prefacev
- RTP2001 Organizationvii
- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Tech1
- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Im9
- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing17
- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier29
- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication37
- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD49
- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs59
- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical63
- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by69
- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials75
- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposit83
- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film93
- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices99
- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SO107
- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes115
- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via h121
- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor129
- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Gr133
- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction139
- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Suppl145
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.
This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.