Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series
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Table of contents
- Cover
- Contentsv
- Preface to the first editionxi
- Preface to the second editionxiii
- Chapter 1. Introduction1
- 1.1 Development of SiGe technology1
- 1.2 Commercial production of SiGe devices3
- 1.3 Landmarks in the development of SiGe devices5
- Chapter 2. Strain, stability, reliability and growth9
- 2.1 Strain and dislocations9
- 2.2 Strain and dislocation energies12
- 2.3 Critical thickness17
- 2.4 Stability of strained layers22
- 2.5 Stresses in quantum structures29
- 2.6 Poly-SiGe and poly-SiGeC films33
- 2.7 Growth of strain relaxed layers35
- Chapter 3. Mechanism of strain relaxation41
- 3.1 Introduction41
- 3.2 Propagation of dislocations41
- 3.3 Nucleation, multiplication and blocking47
- 3.4 Strain relaxation54
- 3.5 Summary58
- Chapter 4. Strain, growth, and TED in SiGeC layers61
- 4.1 Introduction61
- 4.2 Strain and Growth of Si1–x–yGexCy layers62
- 4.3 Thermal diffusion73
- 4.4 TED and its suppression by carbon79
- 4.5 Modelling of TED in Si1–x–yGexCy layers84
- 4.6 Conclusion and summary90
- Chapter 5. Bandstructure and related properties91
- 5.1 Effect of strain on bandstructure91
- 5.2 Effective Density of States and Fermi energy98
- 5.3 Bandgap narrowing due to heavy doping101
- 5.4 Mobility105
- 5.5 Electrical properties of SiGeC films116
- 5.6 Optical properties of unstrained alloys118
- 5.7 Optical studies of strained layers124
- 5.8 Optical studies of quantum wires and dots134
- 5.9 Superlattices (SLs)140
- Chapter 6. Heterostructure Bipolar Transistors147
- 6.1 Introduction147
- 6.2 Design149
- 6.3 Technology154
- 6.4 DC performance of SiGe HBTs161
- 6.5 AC characteristics of the HBTs165
- 6.6 Optimization of BVceo, ft and fmax169
- 6.7 HBTs with SiGeC base-layers178
- 6.8 Noise183
- 6.9 Circuit applications188
- 6.10 Summary192
- Chapter 7. FETs and other devices195
- 7.1 Ge channel MOS transistors195
- 7.2 Strained layer p-channel MOSFETs196
- 7.3 Strained layer n-channel MOSFETs202
- 7.4 Modulation doped Field Effect Transistors206
- 7.5 Strained-layer MOSFETs on insulator212
- 7.6 High-k gate-insulators215
- 7.7 MOSFETs containing Si1-x-yGexCy alloys218
- 7.8 Ultra-shallow junctions219
- 7.9 Application of SiGe to ultrashallow junctions226
- 7.10 Resonant tunnelling diodes231
- 7.11 Photodetectors, waveguide switch and laser236
- Bibliography243
- Index281
- Contents of Volumes287
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.
Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers
Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers