Ultrafast Physical Processes in Semiconductors

Willardson, Robert K.

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Table of contents
  • Cover
  • Contentsv
  • Prefacexi
  • List of Contributorsxiii
  • Chapter 1. Ultrafast Electron–Phonon Interactions in Semiconductors: Quantum Kinetic Memory Effect1
  • I. Introduction1
  • II. General Considerations4
  • III. Experimental Technique13
  • IV. Results and Discussion25
  • V. Conclusion33
  • References35
  • Chapter 2. Spatially and Temporally Resolved Near-Field Scanning Optical Microscopy Studies of Semic39
  • I. Introduction39
  • II. Semiconductor Nanostructures41
  • III. Near-Field Scanning Optical Microscopy46
  • IV. Stationary Near-Field Spectroscopy of Semiconductor Nanostructures65
  • V. Time-Resolved Near-Field Spectroscopy79
  • VI. Outlook and Conclusions98
  • References98
  • Chapter 3. Ultrafast Dynamics in Wide Bandgap Wurtzite GaN109
  • I. Introduction109
  • II. Raman Spectroscopy in Semiconductors110
  • III. Samples, Experimental Setup, and Approach125
  • IV. Phonon Modes in the Wurtzite Structure GaN128
  • V. Experimental Results128
  • VI. Conclusions and Future Experiments147
  • References148
  • Chapter 4. Ultrafast Dynamics and Phase Changes in Highly Excited GaAs151
  • I. Introduction152
  • II. Measuring Ultrafast Phenomena with Light154
  • III. Dynamics of Electrons and Atoms from Femtoseconds to Microseconds166
  • IV. Measuring the Time-Resolved Dielectric Function179
  • V. Time-Resolved Dielectric Function of Highly Excited GaAs182
  • VI. Carrier and Lattice Dynamics191
  • VII. Conclusions200
  • References202
  • Chapter 5. Quantum Kinetics for Femtosecond Spectroscopy in Semiconductors205
  • I. Introduction205
  • II. Semiconductor Bloch Equations for Pulse Excitation with Quantum Kinetic Scattering Integrals209
  • III. Low-Excitation Femtosecond Spectroscopy215
  • IV. Femtosecond DTS for Screened Coulomb and LO-Phonon Quantum Kinetic Scattering220
  • V. Resonant FWM with Screened Coulomb and LO-Phonon Quantum Kinetic Scattering223
  • References228
  • Chapter 6. Coulomb Correlation Signatures in the Excitonic Optical Nonlinearities of Semiconductors231
  • I. Introduction231
  • II. Theoretical Approach and Model242
  • III. Applications to Pump-Probe Spectroscopy254
  • IV. Absorption Changes Induced by Incoherent Occupations280
  • V. Applications to Four-Wave-Mixing Spectroscopy290
  • VI. Summary304
  • VII. Outlook307
  • References309
  • Chapter 7. Electronic and Structural Response of Materials to Fast, Intense Laser Pulses315
  • I. Introduction315
  • II. Tight-Binding Electron„Ion Dynamics317
  • III. ε (ω ) and χ(2) as Signatures of a Nonthermal Phase Transition327
  • IV. Detailed Information from Microscopic Simulations336
  • V. Formula for the Second-Order Susceptibility χ(2)356
  • VI. Response of Si to Fast, Intense Pulses363
  • VII. Density Functional Simulation for Si370
  • VIII. Response of C60 to Ultrafast Pulses of Low, High, and Very High Intensity371
  • IX. The Simplest System, H2+377
  • X. Biological Molecules382
  • XI. Conclusion384
  • References386
  • Chapter 8. Coherent THz Emission in Semiconductors389
  • I. Introduction390
  • II. Principles of Pulsed THz Emission and Detection392
  • III. Macroscopic Currents and Polarizations400
  • IV. Coherent Charge Oscillations410
  • V. THz Emission from Quantum Structures420
  • VI. Applications in Semiconductor Spectroscopy427
  • VII. Conclusions433
  • References434
  • Index441
  • Contents of Volumes in This Series449
Book details
  • Vendor Elsevier S & T
  • SKU 9780127521763
  • ISBN-13 9780080540955
  • Author Willardson, Robert K.
  • Category Technology & Engineering
  • Subject Semiconductors

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.